2N6582 Silicon NPN Power Transistor

Inchange Semiconductor

Description

isc Silicon NPN Power Transistor .
Excellent Safe Operating Area. Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 350V(Min). High Current Capability. Collector-Emit.

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Datasheet Specifications

Part number: 2N6582
Manufacturer: Inchange Semiconductor
File Size: 187.76 KB
Datasheet: 2N6582-InchangeSemiconductor.pdf
Description: Silicon NPN Power Transistor

Applications

* Designed for linear amplifiers, series pass regulators, and inductive switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 450 V VCEO Collector-Emitter Voltage 350 V VEBO Emitter-Base Voltage 9 V IC Collector Current

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2N6582 Silicon NPN Power Transistor Inchange Semiconductor

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