2N6588
SSDI
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Npn transistor.
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2N6580 - Silicon NPN Power Transistor
(Inchange Semiconductor)
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2N6580
DESCRIPTION ·Excellent Safe Operating Area ·High Voltage,Hi.
2N6581 - Bipolar NPN Device
(Seme LAB)
2N6581
Dimensions in mm (inches).
25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135)
6.35 (0.25) 9.15 (0.36)
Bipolar NPN.
2N6581 - Silicon NPN Power Transistor
(Inchange Semiconductor)
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isc Silicon NPN Power Transistor
isc Product Specification
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DESCRIPTION ·Excellent Safe Operating Area ·High Voltage,Hi.
2N6582 - Silicon NPN Power Transistor
(Inchange Semiconductor)
isc Silicon NPN Power Transistor
DESCRIPTION ·Excellent Safe Operating Area ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 350V(Min) ·High Curr.
2N6583 - Bipolar NPN Device
(Seme LAB)
2N6583
Dimensions in mm (inches).
25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135)
6.35 (0.25) 9.15 (0.36)
Bipolar NPN.
2N6583 - Silicon NPN Power Transistor
(Inchange Semiconductor)
isc Silicon NPN Power Transistor
DESCRIPTION ·Excellent Safe Operating Area ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 400V(Min) ·High Curr.
2N6584 - Silicon NPN Power Transistor
(Inchange Semiconductor)
isc Silicon NPN Power Transistor
DESCRIPTION ·Excellent Safe Operating Area ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 450V(Min) ·High Curr.
2N6589 - NPN Transistor
(SSDI)
10 AMP NPN(continued)
Sorted by IC, then VCEO
Part Number
mIaCx (A)
mVCaExO (V)
Ratings based on 25˚C case temperature unless otherwise specified
.
2N65 - 650V N-Channel Power MOSFET
(JINAN JINGHENG)
R SEMICONDUCTOR
2N65 650V N-Channel Power MOSFET
FEATURES
● RDS(ON)<4.4Ω @ VGS=10V,ID=1A ● Fast switching capability ● Lead free in pliance with .
2N65 - N-CHANNEL POWER MOSFET
(GME)
Production specification
2A, 650 Volts N-CHANNEL POWER MOSFET
FEATURES
z RDS(on)=5.0Ω@VGS=10V.
Pb
z Ultra Low gate charge (typical 9.0nC) Lead-fr.