2N6581 Datasheet, Device, Seme LAB

PDF File Details

Part number:

2N6581

Manufacturer:

Seme LAB

File Size:

11.30kb

Download:

📄 Datasheet

Description:

Bipolar npn device.

TAGS

2N6581

Seme LAB

📁 Related Datasheet

2N6580 - Silicon NPN Power Transistor (Inchange Semiconductor)
INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 2N6580 DESCRIPTION ·Excellent Safe Operating Area ·High Voltage,Hi.

2N6581 - Silicon NPN Power Transistor (Inchange Semiconductor)
INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 2N6581 DESCRIPTION ·Excellent Safe Operating Area ·High Voltage,Hi.

2N6582 - Silicon NPN Power Transistor (Inchange Semiconductor)
isc Silicon NPN Power Transistor DESCRIPTION ·Excellent Safe Operating Area ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 350V(Min) ·High Curr.

2N6583 - Bipolar NPN Device (Seme LAB)
2N6583 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) Bipolar NPN.

2N6583 - Silicon NPN Power Transistor (Inchange Semiconductor)
isc Silicon NPN Power Transistor DESCRIPTION ·Excellent Safe Operating Area ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 400V(Min) ·High Curr.

2N6584 - Silicon NPN Power Transistor (Inchange Semiconductor)
isc Silicon NPN Power Transistor DESCRIPTION ·Excellent Safe Operating Area ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 450V(Min) ·High Curr.

2N6588 - NPN Transistor (SSDI)
10 AMP NPN(continued) Sorted by IC, then VCEO Part Number mIaCx (A) mVCaExO (V) Ratings based on 25˚C case temperature unless otherwise specified .

2N6589 - NPN Transistor (SSDI)
10 AMP NPN(continued) Sorted by IC, then VCEO Part Number mIaCx (A) mVCaExO (V) Ratings based on 25˚C case temperature unless otherwise specified .

2N65 - 650V N-Channel Power MOSFET (JINAN JINGHENG)
R SEMICONDUCTOR 2N65 650V N-Channel Power MOSFET FEATURES ● RDS(ON)<4.4Ω @ VGS=10V,ID=1A ● Fast switching capability ● Lead free in pliance with .

2N65 - N-CHANNEL POWER MOSFET (GME)
Production specification 2A, 650 Volts N-CHANNEL POWER MOSFET FEATURES z RDS(on)=5.0Ω@VGS=10V. Pb z Ultra Low gate charge (typical 9.0nC) Lead-fr.