2N6581
Seme LAB
11.30 KB
Bipolar npn device.
2N6581
Dimensions in mm (inches).
25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135)
6.35 (0.25) 9.15 (0.36)
Bipolar NPN.
📁 Related Datasheet
2N6580 - Silicon NPN Power Transistor
(Inchange Semiconductor)
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2N6580
DESCRIPTION ·Excellent Safe Operating Area ·High Voltage,Hi.
2N6581 - Silicon NPN Power Transistor
(Inchange Semiconductor)
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2N6581
DESCRIPTION ·Excellent Safe Operating Area ·High Voltage,Hi.
2N6582 - Silicon NPN Power Transistor
(Inchange Semiconductor)
isc Silicon NPN Power Transistor
DESCRIPTION ·Excellent Safe Operating Area ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 350V(Min) ·High Curr.
2N6583 - Bipolar NPN Device
(Seme LAB)
2N6583
Dimensions in mm (inches).
25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135)
6.35 (0.25) 9.15 (0.36)
Bipolar NPN.
2N6583 - Silicon NPN Power Transistor
(Inchange Semiconductor)
isc Silicon NPN Power Transistor
DESCRIPTION ·Excellent Safe Operating Area ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 400V(Min) ·High Curr.
2N6584 - Silicon NPN Power Transistor
(Inchange Semiconductor)
isc Silicon NPN Power Transistor
DESCRIPTION ·Excellent Safe Operating Area ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 450V(Min) ·High Curr.
2N6588 - NPN Transistor
(SSDI)
10 AMP NPN(continued)
Sorted by IC, then VCEO
Part Number
mIaCx (A)
mVCaExO (V)
Ratings based on 25˚C case temperature unless otherwise specified
.
2N6589 - NPN Transistor
(SSDI)
10 AMP NPN(continued)
Sorted by IC, then VCEO
Part Number
mIaCx (A)
mVCaExO (V)
Ratings based on 25˚C case temperature unless otherwise specified
.
