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2SA1535A POWER TRANSISTOR

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Description

isc Silicon PNP Power Transistors .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= -150V(Min) -2SA1535 = -180V(Min) -2SA1535A. Good Linearity of hFE. Complement to Type 2S.

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Datasheet Specifications

Part number
2SA1535A
Manufacturer
Inchange Semiconductor
File Size
218.53 KB
Datasheet
2SA1535A_InchangeSemiconductor.pdf
Description
POWER TRANSISTOR

Applications

* Designed for low-frequency driver and high power amplifi- cation, is optimum for the driver-stage of a 60W to 100 W output amplifier. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT 2SA1535 -150 VCBO Collector-Base Voltage V 2SA1535A -180 2SA1535 -150 VCEO Collector

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