2SA1859 Datasheet - Inchange Semiconductor

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2SA1859 Power Transistor

isc Silicon PNP Power Transistor .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= -150V(Min). Complement to Type 2SC4883. Minimum Lot-to-Lot variations for robust device.

2SA1859_InchangeSemiconductor.pdf

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Datasheet Details

Part number:

2SA1859

Manufacturer:

Inchange Semiconductor

File Size:

210.04 KB

Description:

Power Transistor

Applications

* Designed for audio output driver and TV velocity-modulation applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -150 V VCEO Collector-Emitter Voltage -150 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -2

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2SA1859 Power Transistor Inchange Semiconductor

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