Datasheet4U Logo Datasheet4U.com

2SA1859 - Power Transistor

📥 Download Datasheet

Preview of 2SA1859 PDF
datasheet Preview Page 2

2SA1859 Product details

Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= -150V(Min) Complement to Type 2SC4883 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio output driver and TV velocity-modulation applications.ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -150 V VCEO Collector-Emitter Voltage -150 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -2 A

📁 2SA1859 Similar Datasheet

  • 2SA1859A - Silicon PNP Transistor (Sanken electric)
  • 2SA1850 - PNP/NPN Epitaxial Planar Silicon Transistor (Sanyo Semicon Device)
  • 2SA1852 - PNP / NPN Epitaxial Planar Silicon Transistors (Sanyo Semicon Device)
  • 2SA1853 - PNP/NPN Epitaxial Planar Silicon Transistor (Sanyo Semicon Device)
  • 2SA1854 - PNP Epitaxial Planar Silicon Transistor (Sanyo Semicon Device)
  • 2SA1855 - PNP/NPN Epitaxial Planar Silicon Transistors (Sanyo Semicon Device)
  • 2SA1857 - PNP Epitaxial Planar Silicon Transistor (Sanyo Semicon Device)
  • 2SA1858 - Silicon PNP epitaxial planer type Transistor (Panasonic Semiconductor)
Other Datasheets by Inchange Semiconductor
Published: |