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2SA1852 - PNP / NPN Epitaxial Planar Silicon Transistors

Datasheet Summary

Features

  • Adoption of FBET process. High fT : fT=300MHz(typ). High breakdown voltage : VCEO=200V. Small reverse transfer capacitance and excellent high -frequency characteristic : Cre=1.5pF / NPN, 1.8pF / PNP. Shipped in reel tape container to facilitate antomatic mounting. 10.5 1.9 4.5 1.2 2.6 1.4 1.2 7.5 1.6 0.5 0.5 1 2 3 1.0 8.5 Specifications ( ) : 2SA1852 Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to.

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Datasheet Details

Part number 2SA1852
Manufacturer Sanyo Semicon Device
File Size 26.82 KB
Description PNP / NPN Epitaxial Planar Silicon Transistors
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Full PDF Text Transcription

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Ordering number : ENN5495A 2SA1852 / 2SC4826 PNP / NPN Epitaxial Planar Silicon Transistors 2SA1852 / 2SC4826 High Definition CRT Display Video Output Applications Applications • Package Dimensions unit : mm 2084B [2SA1852 / 2SC4826] High definition CRT display video output, wide-band amplifer. Features • • • • • Adoption of FBET process. High fT : fT=300MHz(typ). High breakdown voltage : VCEO=200V. Small reverse transfer capacitance and excellent high -frequency characteristic : Cre=1.5pF / NPN, 1.8pF / PNP. Shipped in reel tape container to facilitate antomatic mounting. 10.5 1.9 4.5 1.2 2.6 1.4 1.2 7.5 1.6 0.5 0.5 1 2 3 1.0 8.
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