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2SA1802 Datasheet - Toshiba Semiconductor

2SA1802 Silicon PNP Epitaxial Type Transistor

TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA1802 Strobe Flash Applications Medium Power Amplifier Applications 2SA1802 Unit: mm Excellent hFE linearity : hFE (1) = 200 to 600 (VCE = 2 V, IC = 0.5 A) : hFE (2) = 140 (min), 200 (typ.) (VCE = 2 V, IC = 3 A) Low collector saturation voltage : VCE (sat) = 0.5 V (max) (IC = 3 A, IB = 60 mA) Complementary to 2SC4681 Maximum Ratings (Ta = 25°C) Characteristics Sym.

2SA1802_ToshibaSemiconductor.pdf

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Datasheet Details

Part number:

2SA1802

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

78.54 KB

Description:

Silicon pnp epitaxial type transistor.

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2SA1802 2SA1802 Silicon PNP Epitaxial Type Transistor Toshiba Semiconductor

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