Click to expand full text
TOSHIBA Transistor Silicon PNP Epitaxial Type
2SA1802
Strobe Flash Applications Medium Power Amplifier Applications
2SA1802
Unit: mm
· Excellent hFE linearity : hFE (1) = 200 to 600 (VCE = −2 V, IC = −0.5 A) : hFE (2) = 140 (min), 200 (typ.) (VCE = −2 V, IC = −3 A)
· Low collector saturation voltage : VCE (sat) = −0.5 V (max) (IC = −3 A, IB = −60 mA)
· Complementary to 2SC4681
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
DC
Pulsed (Note 1)
Base current
Collector power dissipation
Ta = 25°C Tc = 25°C
Junction temperature
Storage temperature range
VCBO VCES VCEO VEBO
IC
ICP
IB
PC
Tj Tstg
−30 −30 −10 −6 −3
−6
−0.5 1.
2SA1802 Datasheet
