* Very small-sized package permitting 2SA1814- applied sets to be made smaller and slimmer.
* Adoption of FBET process.
* High DC current gain (hFE=500 to 1200).
* Low collector-to-emitter saturation voltage (VCEO(sat)≤0.3V).
* High VEBO (VEBO≥15V). Package Dimensions unit:mm 20
2SA1814
Sanyo Semicon Device
82.73 KB
Pnp epitaxial planar silicon transistor.
Ordering number:EN3973
PNP Epitaxial Planar Silicon Transistor
2SA1814
Low-Frequency General-Purpose Amplifier Driver, Muting Circuit Applications
F.
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..
Unit: mm
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2SA1816 - Silicon PNP epitaxial planer type Transistor
(Panasonic Semiconductor)
Transistor
2SA1816(Tentative)
Silicon PNP epitaxial planer type
For low-frequency high breakdown voltage amplification
4.0±0.2
3.0±0.2
Unit: mm
s F.
