2SA1814 Datasheet PDF - Sanyo Semicon Device PNP Epitaxial Planar Silicon Transistor Specs

2SA1814 - PNP Epitaxial Planar Silicon Transistor

Datasheet Summary

Features

Very small-sized package permitting 2SA1814- applied sets to be made smaller and slimmer.
Adoption of FBET process.
High DC current gain (hFE=500 to 1200).
Low collector-to-emitter saturation voltage (VCEO(sat)≤0.3V).
High VEBO (VEBO≥15V). Package Dimensions unit:mm 2018B [2SA1814] Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Puls.

Datasheet Details

Part number	2SA1814
Manufacturer	Sanyo Semicon Device
File Size	82.73 KB
Description	PNP Epitaxial Planar Silicon Transistor
Datasheet	2SA1814 Datasheet
Additional preview pages of the 2SA1814 datasheet.

📁 Similar Datasheet

2SA1810 - Silicon PNP Epitaxial Transistor (Hitachi Semiconductor)

2SA1811 - TRANSISTOR (Toshiba Semiconductor)

2SA1812 - High-voltage Switching Transistor (Rohm)

2SA1815 - PNP Epitaxial Planar Silicon Transistors (Guangdong Kexin Industrial)

2SA1816 - Silicon PNP epitaxial planer type Transistor (Panasonic Semiconductor)

2SA1818 - 1.2W PACKAGE POWER TAPED TRANSISTOR (Rohm)

2SA1801 - TRANSISTOR (Toshiba Semiconductor)

2SA1802 - Silicon PNP Epitaxial Type Transistor (Toshiba Semiconductor)

2SA1803 - TRANSISTOR (Toshiba Semiconductor)

2SA1803 - SILICON POWER TRANSISTOR (SavantIC)

Full PDF Text Transcription

Click to expand full text

Ordering number:EN3973 PNP Epitaxial Planar Silicon Transistor 2SA1814 Low-Frequency General-Purpose Amplifier Driver, Muting Circuit Applications Features · Very small-sized package permitting 2SA1814- applied sets to be made smaller and slimmer. · Adoption of FBET process. · High DC current gain (hFE=500 to 1200). · Low collector-to-emitter saturation voltage (VCEO(sat)≤0.3V). · High VEBO (VEBO≥15V).

Published: Mar 22, 2005 |