* Very small-sized package permitting 2SA1813- applied sets to be made smaller and slimmer.
* Adoption of FBET process.
* High DC current gain (hFE=500 to 1200).
* Low collector-to-emitter saturation voltage (VCE(sat)≤0.3V).
* High VEBO (VEBO≥15V). Package Dimensions unit:mm 205
2SA1813
Sanyo Semicon Device
81.32 KB
Pnp epitaxial planar silicon transistor.
Ordering number:EN3972
PNP Epitaxial Planar Silicon Transistor
2SA1813
Low-Frequency General-Purpose Amplifier Driver, Muting Circuit Applications
F.
📁 Related Datasheet
2SA1810 - Silicon PNP Epitaxial Transistor
(Hitachi Semiconductor)
2SA1810
Silicon PNP Epitaxial
Application
High frequency amplifier
Features
• Excellent high frequency characteristics fT = 300 MHz typ • High volta.
2SA1811 - TRANSISTOR
(Toshiba Semiconductor)
.
2SA1812 - High-voltage Switching Transistor
(Rohm)
Transistors
2SA1812 / 2SA1727 / 2SA1776
High-voltage Switching Transistor ( 400V, 0.5A)
2SA1812 / 2SA1727 / 2SA1776
Features
1) High breakdown volt.
2SA1814 - PNP Epitaxial Planar Silicon Transistor
(Sanyo Semicon Device)
Ordering number:EN3973
PNP Epitaxial Planar Silicon Transistor
2SA1814
Low-Frequency General-Purpose Amplifier Driver, Muting Circuit Applications
F.
2SA1815 - PNP Epitaxial Planar Silicon Transistor
(Sanyo Semicon Device)
Ordering number:EN4625
PNP Epitaxial Planar Silicon Transistor
2SA1815
FM, RF, MIX, IF Amplifier, High-Frequency General-Purpose Amplifier Applicatio.
2SA1815 - PNP Epitaxial Planar Silicon Transistors
(Guangdong Kexin Industrial)
SMD Type
Transistors IC
PNP Epitaxial Planar Silicon Transistors 2SA1815
SOT-23
+0.1 2.9-0.1 +0.1 0.4-0.1
..
Unit: mm
+0.1 2.4-0..
2SA1816 - Silicon PNP epitaxial planer type Transistor
(Panasonic Semiconductor)
Transistor
2SA1816(Tentative)
Silicon PNP epitaxial planer type
For low-frequency high breakdown voltage amplification
4.0±0.2
3.0±0.2
Unit: mm
s F.
