2SA1813 - PNP Epitaxial Planar Silicon Transistor
2SA1813 Features
* Very small-sized package permitting 2SA1813- applied sets to be made smaller and slimmer.
* Adoption of FBET process.
* High DC current gain (hFE=500 to 1200).
* Low collector-to-emitter saturation voltage (VCE(sat)≤0.3V).
* High VEBO (VEBO≥15V). Package Dimensions unit:mm 205
