2SA1813 Datasheet - Sanyo Semicon Device

2SA1813 PNP Epitaxial Planar Silicon Transistor

2SA1813 Features

* Very small-sized package permitting 2SA1813- applied sets to be made smaller and slimmer.

* Adoption of FBET process.

* High DC current gain (hFE=500 to 1200).

* Low collector-to-emitter saturation voltage (VCE(sat)≤0.3V).

* High VEBO (VEBO≥15V). Package Dimensions unit:mm 205

Datasheet Details

2SA1813

Sanyo Semicon Device

81.32 KB

Pnp epitaxial planar silicon transistor.

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