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2SA1858 - Silicon PNP epitaxial planer type Transistor

Datasheet Summary

Features

  • 0.45.
  • 0.1 +0.15 2.3±0.2 W ˚C ˚C 2.54±0.15 1:Emitter 2:Collector 3:Base TO.
  • 92NL Package s Electrical Characteristics Parameter Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Collector output capacitance (Ta=25˚C) Symbol VCEO VEBO hFE.
  • VCE(sat) fT Cob Conditions IC =.
  • 100µA, IB = 0 IE =.
  • 1µA, IC = 0 VCE =.
  • 10V, IC =.
  • 5mA IC =.
  • 10mA, I.

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Datasheet Details

Part number 2SA1858
Manufacturer Panasonic Semiconductor
File Size 36.51 KB
Description Silicon PNP epitaxial planer type Transistor
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Full PDF Text Transcription

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Transistor 2SA1858 Silicon PNP epitaxial planer type For general amplification 5.0±0.2 4.0±0.2 Unit: mm q High collector to emitter voltage VCEO. s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg (Ta=25˚C) Ratings –300 –300 –5 –100 –70 1 150 –55 ~ +150 Unit V V V mA mA 1 2 3 1.27 0.45 –0.1 1.27 +0.15 13.5±0.5 0.7±0.1 0.7±0.2 8.0±0.2 s Features 0.45 –0.1 +0.15 2.3±0.2 W ˚C ˚C 2.54±0.
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