2SA2140 Silicon PNP Power Transistor

Inchange Semiconductor

Description

isc Silicon PNP Power Transistor .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= -180V(Min). Good Linearity of hFE. Minimum Lot-to-Lot variations for robust device perfo.

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Datasheet Specifications

Part number: 2SA2140
Manufacturer: Inchange Semiconductor
File Size: 214.38 KB
Datasheet: 2SA2140-InchangeSemiconductor.pdf
Description: Silicon PNP Power Transistor

Applications

* Designed for power amplification and for TV VM circuit. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -180 V VCEO Collector-Emitter Voltage -180 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -1.5 A ICP Collecto

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2SA2140 Silicon PNP Power Transistor Inchange Semiconductor

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