2SA2140 - Silicon PNP Power Transistor
*Collector-Emitter Breakdown Voltage- : V(BR)CEO= -180V(Min) *Good Linearity of hFE *Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS *Designed for power amplification and for TV VM circuit.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PA
