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2SA2151 POWER TRANSISTOR

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Description

isc Silicon PNP Power Transistor 2SA2151 .
High Collector-Emitter Breakdown Voltage- V(BR)CEO= -200V(Min). Good Linearity of hFE. Complement to Type 2SC6011. Minimum Lot-to-Lot.

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Datasheet Specifications

Part number
2SA2151
Manufacturer
Inchange Semiconductor
File Size
221.61 KB
Datasheet
2SA2151_InchangeSemiconductor.pdf
Description
POWER TRANSISTOR

Applications

* Designed for audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -200 V VCEO Collector-Emitter Voltage -200 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -15 A IB Base Current-C

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