2SA738 POWER TRANSISTOR

Inchange Semiconductor

Description

isc Silicon PNP Power Transistor .
Collector-Emitter Breakdown Voltage- V(BR)CEO= -25V (Min). Good Linearity of hFE. Complement to Type 2SC1368. Minimum Lot-to-Lot vari.

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Datasheet Specifications

Part number: 2SA738
Manufacturer: Inchange Semiconductor
File Size: 188.58 KB
Datasheet: 2SA738_InchangeSemiconductor.pdf
Description: POWER TRANSISTOR

Applications

* Designed for use as driver stages in high-fidelity amplifiers and TV circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -25 V VCEO Collector-Emitter Voltage -25 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -2.

2SA738 Distributors

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2SA738 POWER TRANSISTOR Inchange Semiconductor

Inchange Semiconductor 2SA738-like datasheet