2SA714 POWER TRANSISTOR

Inchange Semiconductor

Description

isc Silicon PNP Power Transistor .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min. Wide Area of Safe Operation. Minimum Lot-to-Lot variations for robust devic.

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Datasheet Specifications

Part number: 2SA714
Manufacturer: Inchange Semiconductor
File Size: 189.46 KB
Datasheet: 2SA714_InchangeSemiconductor.pdf
Description: POWER TRANSISTOR

Applications

* Power amplifier applications.
* Power switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -150 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous PC Collector P

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2SA714 POWER TRANSISTOR Inchange Semiconductor

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