2SA714 Datasheet - Inchange Semiconductor

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2SA714 POWER TRANSISTOR

isc Silicon PNP Power Transistor .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min. Wide Area of Safe Operation. Minimum Lot-to-Lot variations for robust devic.

2SA714_InchangeSemiconductor.pdf

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Datasheet Details

Part number:

2SA714

Manufacturer:

Inchange Semiconductor

File Size:

189.46 KB

Description:

POWER TRANSISTOR

Applications

* Power amplifier applications.
* Power switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -150 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous PC Collector P

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2SA714 POWER TRANSISTOR Inchange Semiconductor

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