2SA755 POWER TRANSISTOR

Inchange Semiconductor

Description

isc Silicon PNP Power Transistor 2SA755 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= -50V(Min). Low Collector Saturation Voltage- : VCE(sat)= -1. Good L.

📥 Download Datasheet

2SA755 Datasheet Preview — Preview of 2SA755 PDF

Datasheet Specifications

Part number: 2SA755
Manufacturer: Inchange Semiconductor
File Size: 209.72 KB
Datasheet: 2SA755_InchangeSemiconductor.pdf
Description: POWER TRANSISTOR

Applications

* Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -4 V IC Collector Current-Continuous -2 A PC Total Power Di

2SA755 Distributors

📁 Related Datasheet

2SA751 2SA752 2SA753 2SA754 2SA756 2SA757

📌 All Tags

2SA755 POWER TRANSISTOR Inchange Semiconductor

Inchange Semiconductor 2SA755-like datasheet