2SA755 Datasheet - Inchange Semiconductor

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2SA755 POWER TRANSISTOR

isc Silicon PNP Power Transistor 2SA755 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= -50V(Min). Low Collector Saturation Voltage- : VCE(sat)= -1. Good L.

2SA755_InchangeSemiconductor.pdf

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Datasheet Details

Part number:

2SA755

Manufacturer:

Inchange Semiconductor

File Size:

209.72 KB

Description:

POWER TRANSISTOR

Applications

* Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -4 V IC Collector Current-Continuous -2 A PC Total Power Di

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