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2SA747 Datasheet - Inchange Semiconductor

2SA747 POWER TRANSISTOR

*High Power Dissipation- : PC= 100W(Max.)@TC=25℃ *Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min.) *Complement to Type 2SC1116 *Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS *Designed for general purpose applications. .

2SA747_InchangeSemiconductor.pdf

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Datasheet Details

Part number:

2SA747

Manufacturer:

Inchange Semiconductor

File Size:

196.05 KB

Description:

Power transistor.

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2SA747 2SA747 POWER TRANSISTOR Inchange Semiconductor