2SA747 POWER TRANSISTOR

Inchange Semiconductor

Description

isc Silicon PNP Power Transistor 2SA747 .
High Power Dissipation- : PC= 100W(Max. Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min. Complement to Type 2SC1116.

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Datasheet Specifications

Part number: 2SA747
Manufacturer: Inchange Semiconductor
File Size: 196.05 KB
Datasheet: 2SA747_InchangeSemiconductor.pdf
Description: POWER TRANSISTOR

Applications

* Designed for general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -120 V VCEO Collector-Emitter Voltage -120 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -10 A IB Base Current-Continuous

2SA747 Distributors

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2SA747 POWER TRANSISTOR Inchange Semiconductor

Inchange Semiconductor 2SA747-like datasheet