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2SA756 POWER TRANSISTOR

2SA756 Description

isc Silicon PNP Power Transistor 2SA756 .
High Power Dissipation- : PC= 50W(Max. Collector-Emitter Breakdown Voltage- : V(BR)CEO= -80V(Min. Minimum Lot-to-Lot variation.

2SA756 Applications

* Designed for use in audio amplifier power output stage and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Con

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Datasheet Details

Part number
2SA756
Manufacturer
Inchange Semiconductor
File Size
202.62 KB
Datasheet
2SA756_InchangeSemiconductor.pdf
Description
POWER TRANSISTOR

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POWER TRANSISTOR Inchange Semiconductor
Inchange Semiconductor 2SA756-like datasheet