2SA756 POWER TRANSISTOR

Inchange Semiconductor

Description

isc Silicon PNP Power Transistor 2SA756 .
High Power Dissipation- : PC= 50W(Max. Collector-Emitter Breakdown Voltage- : V(BR)CEO= -80V(Min. Minimum Lot-to-Lot variation.

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Datasheet Specifications

Part number: 2SA756
Manufacturer: Inchange Semiconductor
File Size: 202.62 KB
Datasheet: 2SA756_InchangeSemiconductor.pdf
Description: POWER TRANSISTOR

Applications

* Designed for use in audio amplifier power output stage and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Con

2SA756 Distributors

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2SA756 POWER TRANSISTOR Inchange Semiconductor

Inchange Semiconductor 2SA756-like datasheet