2SA756 Datasheet - Inchange Semiconductor

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2SA756 POWER TRANSISTOR

isc Silicon PNP Power Transistor 2SA756 .
High Power Dissipation- : PC= 50W(Max. Collector-Emitter Breakdown Voltage- : V(BR)CEO= -80V(Min. Minimum Lot-to-Lot variation.

2SA756_InchangeSemiconductor.pdf

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Datasheet Details

Part number:

2SA756

Manufacturer:

Inchange Semiconductor

File Size:

202.62 KB

Description:

POWER TRANSISTOR

Applications

* Designed for use in audio amplifier power output stage and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Con

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2SA756 POWER TRANSISTOR Inchange Semiconductor

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