2SA757 Datasheet - Inchange Semiconductor

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2SA757 POWER TRANSISTOR

isc Silicon PNP Power Transistor 2SA757 .
High Power Dissipation- : PC= 60W(Max. Collector-Emitter Breakdown Voltage- : V(BR)CEO= -90V(Min. Minimum Lot-to-Lot variation.

2SA757_InchangeSemiconductor.pdf

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Datasheet Details

Part number:

2SA757

Manufacturer:

Inchange Semiconductor

File Size:

198.35 KB

Description:

POWER TRANSISTOR

Applications

* Designed for use in audio amplifier power output stage and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -120 V VCEO Collector-Emitter Voltage -90 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Con

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2SA757 POWER TRANSISTOR Inchange Semiconductor

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