2SA766 Datasheet - Inchange Semiconductor

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2SA766 POWER TRANSISTOR

isc Silicon PNP Power Transistor 2SA766 .
Collector-Base Breakdown Voltage- : V(BR)CBO= -150V(Min). High Collector Power Dissipation. Complement to Type 2SC1450. Minimum Lot-to.

2SA766_InchangeSemiconductor.pdf

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Datasheet Details

Part number:

2SA766

Manufacturer:

Inchange Semiconductor

File Size:

209.13 KB

Description:

POWER TRANSISTOR

Applications

* Line-operated vertical deflection output
* Medium power amplifier ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -150 V VCEO Collector-Emitter Voltage -150 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -0.4 A IC

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