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2SA768 POWER TRANSISTOR

2SA768 Description

isc Silicon PNP Power Transistor 2SA768 .
Collector-Emitter Breakdown Voltage- :V(BR)CEO= -60(V)(Min. Complement to Type 2SC1826. Minimum Lot-to-Lot variations for robust device.

2SA768 Applications

* Designed for audio and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -4 A IB Base Collector Curr

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Datasheet Details

Part number
2SA768
Manufacturer
Inchange Semiconductor
File Size
216.19 KB
Datasheet
2SA768_InchangeSemiconductor.pdf
Description
POWER TRANSISTOR

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POWER TRANSISTOR Inchange Semiconductor
Inchange Semiconductor 2SA768-like datasheet