2SA768 POWER TRANSISTOR

Inchange Semiconductor

Description

isc Silicon PNP Power Transistor 2SA768 .
Collector-Emitter Breakdown Voltage- :V(BR)CEO= -60(V)(Min. Complement to Type 2SC1826. Minimum Lot-to-Lot variations for robust device.

📥 Download Datasheet

2SA768 Datasheet Preview — Preview of 2SA768 PDF

Datasheet Specifications

Part number: 2SA768
Manufacturer: Inchange Semiconductor
File Size: 216.19 KB
Datasheet: 2SA768_InchangeSemiconductor.pdf
Description: POWER TRANSISTOR

Applications

* Designed for audio and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -4 A IB Base Collector Curr

2SA768 Distributors

📁 Related Datasheet

2SA762 2SA763 2SA764 2SA765 2SA766 2SA769

📌 All Tags

2SA768 POWER TRANSISTOR Inchange Semiconductor

Inchange Semiconductor 2SA768-like datasheet