2SA769 Datasheet - Inchange Semiconductor

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2SA769 POWER TRANSISTOR

isc Silicon PNP Power Transistor 2SA769 .
Collector-Emitter Breakdown Voltage- :V(BR)CEO= -80(V)(Min. Complement to Type 2SC1827. Minimum Lot-to-Lot variations for robust device.

2SA769_InchangeSemiconductor.pdf

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Datasheet Details

Part number:

2SA769

Manufacturer:

Inchange Semiconductor

File Size:

216.26 KB

Description:

POWER TRANSISTOR

Applications

* Designed for audio and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -4 A IB Base Collector Curr

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2SA769 POWER TRANSISTOR Inchange Semiconductor

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