2SA770 POWER TRANSISTOR

Inchange Semiconductor

Description

isc Silicon PNP Power Transistor 2SA770 .
Collector-Emitter Breakdown Voltage- :V(BR)CEO= -60(V)(Min. Complement to Type 2SC1985. Minimum Lot-to-Lot variations for robust device.

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Datasheet Specifications

Part number: 2SA770
Manufacturer: Inchange Semiconductor
File Size: 216.22 KB
Datasheet: 2SA770_InchangeSemiconductor.pdf
Description: POWER TRANSISTOR

Applications

* Designed for audio and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -6 A IB Base Collector Curr

2SA770 Distributors

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2SA770 POWER TRANSISTOR Inchange Semiconductor

Inchange Semiconductor 2SA770-like datasheet