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2SA775 Datasheet - Inchange Semiconductor

2SA775 POWER TRANSISTOR

*Collector-Emitter Breakdown Voltage : V(BR)CEO= -100V(Min) *Good Linearity of hFE *Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS *Designed for general-purpose output amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL .

2SA775_InchangeSemiconductor.pdf

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Datasheet Details

Part number:

2SA775

Manufacturer:

Inchange Semiconductor

File Size:

201.40 KB

Description:

Power transistor.

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