2SA775 Datasheet - Inchange Semiconductor

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2SA775 POWER TRANSISTOR

isc Silicon PNP Power Transistor 2SA775 .
Collector-Emitter Breakdown Voltage : V(BR)CEO= -100V(Min). Good Linearity of hFE. Minimum Lot-to-Lot variations for robust device perfor.

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Datasheet Details

Part number:

2SA775

Manufacturer:

Inchange Semiconductor

File Size:

201.40 KB

Description:

POWER TRANSISTOR

Applications

* Designed for general-purpose output amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -4 V IC Collector Current-Continuous PC Total Power Dissi

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