2SA775 POWER TRANSISTOR

Inchange Semiconductor

Description

isc Silicon PNP Power Transistor 2SA775 .
Collector-Emitter Breakdown Voltage : V(BR)CEO= -100V(Min). Good Linearity of hFE. Minimum Lot-to-Lot variations for robust device perfor.

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Datasheet Specifications

Part number: 2SA775
Manufacturer: Inchange Semiconductor
File Size: 201.40 KB
Datasheet: 2SA775_InchangeSemiconductor.pdf
Description: POWER TRANSISTOR

Applications

* Designed for general-purpose output amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -4 V IC Collector Current-Continuous PC Total Power Dissi

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2SA775 POWER TRANSISTOR Inchange Semiconductor

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