Datasheet4U Logo Datasheet4U.com

2SA775 POWER TRANSISTOR

2SA775 Description

isc Silicon PNP Power Transistor 2SA775 .
Collector-Emitter Breakdown Voltage : V(BR)CEO= -100V(Min). Good Linearity of hFE. Minimum Lot-to-Lot variations for robust device perfor.

2SA775 Applications

* Designed for general-purpose output amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -4 V IC Collector Current-Continuous PC Total Power Dissi

📥 Download Datasheet

Preview of 2SA775 PDF
datasheet Preview Page 2

Datasheet Details

Part number
2SA775
Manufacturer
Inchange Semiconductor
File Size
201.40 KB
Datasheet
2SA775_InchangeSemiconductor.pdf
Description
POWER TRANSISTOR

📁 Related Datasheet

  • 2SA770 - (2SA770 / 2SA771) Silicon POwer Transistors (SavantIC)
  • 2SA771 - (2SA770 / 2SA771) Silicon POwer Transistors (SavantIC)
  • 2SA777 - Silicon NPN Transistor (Panasonic Semiconductor)
  • 2SA778 - Silicon PNP Transistor (Hitachi Semiconductor)
  • 2SA778A - Silicon PNP Transistor (Hitachi Semiconductor)
  • 2SA778AK - Silicon PNP Transistor (Hitachi Semiconductor)
  • 2SA778K - Silicon PNP Transistor (Hitachi Semiconductor)
  • 2SA779 - PNP Transistor (INCHANGE)

📌 All Tags

POWER TRANSISTOR Inchange Semiconductor
Inchange Semiconductor 2SA775-like datasheet