2SA794A Datasheet - Inchange Semiconductor

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2SA794A POWER TRANSISTOR

isc Silicon PNP Power Transistor .
High Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min). Good Linearity of hFE. Complement to Type 2SC1567A. Minimum Lot-to-.

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Datasheet Details

Part number:

2SA794A

Manufacturer:

Inchange Semiconductor

File Size:

188.52 KB

Description:

POWER TRANSISTOR

Applications

* Designed for low-frequency high power driver.
* Optimum for the driver stage of low-frequency and 40W to 100W output amplifier. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -120 V VCEO Collector-Emitter Voltage -120 V VEBO Emitter-Ba

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2SA794A POWER TRANSISTOR Inchange Semiconductor

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