2SA794A POWER TRANSISTOR

Inchange Semiconductor

Description

isc Silicon PNP Power Transistor .
High Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min). Good Linearity of hFE. Complement to Type 2SC1567A. Minimum Lot-to-.

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Datasheet Specifications

Part number: 2SA794A
Manufacturer: Inchange Semiconductor
File Size: 188.52 KB
Datasheet: 2SA794A_InchangeSemiconductor.pdf
Description: POWER TRANSISTOR

Applications

* Designed for low-frequency high power driver.
* Optimum for the driver stage of low-frequency and 40W to 100W output amplifier. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -120 V VCEO Collector-Emitter Voltage -120 V VEBO Emitter-Ba

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2SA794A POWER TRANSISTOR Inchange Semiconductor

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