2SA969 POWER TRANSISTOR

Inchange Semiconductor

Description

isc Silicon PNP Power Transistor 2SA969 .
Collector-Emitter Breakdown Voltage : V(BR)CEO= -160V(Min). Good Linearity of hFE. Complement to Type 2SC2239. Minimum Lot-to-Lot var.

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Datasheet Specifications

Part number: 2SA969
Manufacturer: Inchange Semiconductor
File Size: 199.79 KB
Datasheet: 2SA969_InchangeSemiconductor.pdf
Description: POWER TRANSISTOR

Applications

* Power amplifier applications
* Driver stage amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -160 V VCEO Collector-Emitter Voltage -160 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -1.5 A I

2SA969 Distributors

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2SA969 POWER TRANSISTOR Inchange Semiconductor

Inchange Semiconductor 2SA969-like datasheet