Datasheet4U Logo Datasheet4U.com

2SA969 POWER TRANSISTOR

2SA969 Description

isc Silicon PNP Power Transistor 2SA969 .
Collector-Emitter Breakdown Voltage : V(BR)CEO= -160V(Min). Good Linearity of hFE. Complement to Type 2SC2239. Minimum Lot-to-Lot var.

2SA969 Applications

* Power amplifier applications
* Driver stage amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -160 V VCEO Collector-Emitter Voltage -160 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -1.5 A I

📥 Download Datasheet

Preview of 2SA969 PDF
datasheet Preview Page 2

Datasheet Details

Part number
2SA969
Manufacturer
Inchange Semiconductor
File Size
199.79 KB
Datasheet
2SA969_InchangeSemiconductor.pdf
Description
POWER TRANSISTOR

📁 Related Datasheet

  • 2SA962A - SILICON PNP EPITAXIAL TYPE TRANSISTOR (Toshiba)
  • 2SA963 - Silicon POwer Transistors (SavantIC)
  • 2SA965 - Silicon PNP Transistor (Toshiba Semiconductor)
  • 2SA965-Y - PNP Plastic-Encapsulate Transistors (MCC)
  • 2SA965TM - PNP Transistor (SeCoS)
  • 2SA966 - Silicon PNP Epitaxial Type Transistor (Toshiba Semiconductor)
  • 2SA966T - Silicon PNP transistor (BLUE ROCKET ELECTRONICS)
  • 2SA968 - Silicon PNP Transistor (Toshiba)

📌 All Tags

Inchange Semiconductor 2SA969-like datasheet