2SA907 POWER TRANSISTOR

Inchange Semiconductor

Description

isc Silicon PNP Power Transistor 2SA907 .
High Power Dissipation- : PC= 150W(Max. Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min. Complement to Type 2SC1584.

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Datasheet Specifications

Part number: 2SA907
Manufacturer: Inchange Semiconductor
File Size: 194.31 KB
Datasheet: 2SA907_InchangeSemiconductor.pdf
Description: POWER TRANSISTOR

Applications

* Designed for amplifier and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -15 A IB Base Curre

2SA907 Distributors

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2SA907 POWER TRANSISTOR Inchange Semiconductor

Inchange Semiconductor 2SA907-like datasheet