2SA958 Datasheet - Inchange Semiconductor

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2SA958 POWER TRANSISTOR

isc Silicon PNP Power Transistor 2SA958 .
Collector-Emitter Breakdown Voltage : V(BR)CEO= -200V(Min). Minimum Lot-to-Lot variations for robust device performance and reliable operatio.

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Datasheet Details

Part number:

2SA958

Manufacturer:

Inchange Semiconductor

File Size:

199.33 KB

Description:

POWER TRANSISTOR

Applications

* Designed for general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -200 V VCEO Collector-Emitter Voltage -200 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -2 A IB Base Current-Continuous PC

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2SA958 POWER TRANSISTOR Inchange Semiconductor

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