2SA913 Datasheet - Inchange Semiconductor

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2SA913 POWER TRANSISTOR

isc Silicon PNP Power Transistor 2SA913 .
Collector-Emitter Breakdown Voltage : V(BR)CEO= -150V(Min). Complement to Type 2SC1913. Minimum Lot-to-Lot variations for robust device p.

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Datasheet Details

Part number:

2SA913

Manufacturer:

Inchange Semiconductor

File Size:

205.09 KB

Description:

POWER TRANSISTOR

Applications

* Designed for AF high power dirver applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -150 V VCEO Collector-Emitter Voltage -150 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -1 A ICM Collector Current-Pea

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