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2SA957 Datasheet - Inchange Semiconductor

2SA957 POWER TRANSISTOR

*Collector-Emitter Breakdown Voltage : V(BR)CEO= -150V(Min) *Good Linearity of hFE *Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS *Designed for general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE.

2SA957_InchangeSemiconductor.pdf

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Datasheet Details

Part number:

2SA957

Manufacturer:

Inchange Semiconductor

File Size:

199.68 KB

Description:

Power transistor.

2SA957 Distributor

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2SA957 2SA957 POWER TRANSISTOR Inchange Semiconductor