2SA957 POWER TRANSISTOR

Inchange Semiconductor

Description

isc Silicon PNP Power Transistor 2SA957 .
Collector-Emitter Breakdown Voltage : V(BR)CEO= -150V(Min). Good Linearity of hFE. Minimum Lot-to-Lot variations for robust device perfor.

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Datasheet Specifications

Part number: 2SA957
Manufacturer: Inchange Semiconductor
File Size: 199.68 KB
Datasheet: 2SA957_InchangeSemiconductor.pdf
Description: POWER TRANSISTOR

Applications

* Designed for general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -150 V VCEO Collector-Emitter Voltage -150 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -2 A IB Base Current-Continuous PC

2SA957 Distributors

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2SA957 POWER TRANSISTOR Inchange Semiconductor

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