2SB649 - Silicon PNP Power Transistor

Inchange Semiconductor

📥 Download Datasheet

2SB649 Datasheet Preview — Preview of 2SB649 PDF

Datasheet Details

Part number	2SB649
Manufacturer	Inchange Semiconductor
File Size	212.49 KB
Description	Silicon PNP Power Transistor
Datasheet	2SB649_InchangeSemiconductor.pdf

2SB649 Product details

Description

High Collector Current-IC=-1.5A High Collector-Emitter Breakdown Voltage- : V(BR)CEO=-120V(Min) Good Linearity of hFE Low Saturation Voltage Complement to Type 2SD669 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -160 V VCEO Collector-Emitter Voltage -120 V VEBO Emitter-Base Volta

📁 2SB649 Similar Datasheet

2SB649A - Silicon PNP Transistor (Hitachi Semiconductor)
2SB649AM - Bipolar General Purpose PNP Power Transistor (NELL SEMICONDUCTOR)
2SB649TA - Silicon PNP transistor (BLUE ROCKET ELECTRONICS)
2SB642 - Silicon PNP epitaxial planer type Transistor (Panasonic Semiconductor)
2SB643 - Silicon PNP epitaxial planer type Transistor (Panasonic Semiconductor)
2SB644 - Silicon PNP epitaxial planer type Transistor (Panasonic Semiconductor)
2SB645 - PNP Transistor (INCHANGE)
2SB646 - Silicon PNP Epitaxial Transistor (Hitachi)

Other Datasheets by Inchange Semiconductor

2SB688 - Silicon PNP Power Transistor
2SB1089 - Silicon PNP Power Transistors
2SB1090 - Silicon PNP Power Transistors
2SB1095 - Silicon PNP Power Transistors
2SB1100 - Silicon PNP Power Transistors
2SB1144 - Silicon PNP Power Transistors

Published: Mar 14, 2012 |