2SB649 Silicon PNP Power Transistor

Inchange Semiconductor

Description

isc Silicon PNP Power Transistor .
High Collector Current-IC=-1. High Collector-Emitter Breakdown Voltage- : V(BR)CEO=-120V(Min). Good Linearity of hFE. Low Saturati.

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Datasheet Specifications

Part number: 2SB649
Manufacturer: Inchange Semiconductor
File Size: 212.49 KB
Datasheet: 2SB649_InchangeSemiconductor.pdf
Description: Silicon PNP Power Transistor

Applications

* Power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -160 V VCEO Collector-Emitter Voltage -120 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -1.5 A ICP Collector Current-Pulse Collector

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2SB649 Silicon PNP Power Transistor Inchange Semiconductor

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