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2SB645 - PNP Transistor

2SB645 Description

isc Silicon PNP Power Transistors 2SB645 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= -200V(Min). High Power Dissipation- : PC= 150W(Max)@TC=25℃. Complement to Type 2SD665.

2SB645 Applications

* Designed for power amplifier applications.
* Recommended for 200W high-fidelity audio frequency amplifier output stage. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -200 V VCEO Collector-Emitter Voltage -200 V VEBO Emitter-Base Volta

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Datasheet Details

Part number
2SB645
Manufacturer
INCHANGE
File Size
208.70 KB
Datasheet
2SB645-INCHANGE.pdf
Description
PNP Transistor

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PNP Transistor INCHANGE
INCHANGE 2SB645-like datasheet