2SB645 PNP Transistor

INCHANGE

Description

isc Silicon PNP Power Transistors 2SB645 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= -200V(Min). High Power Dissipation- : PC= 150W(Max)@TC=25℃. Complement to Type 2SD665.

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Datasheet Specifications

Part number: 2SB645
Manufacturer: INCHANGE
File Size: 208.70 KB
Datasheet: 2SB645-INCHANGE.pdf
Description: PNP Transistor

Applications

* Designed for power amplifier applications.
* Recommended for 200W high-fidelity audio frequency amplifier output stage. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -200 V VCEO Collector-Emitter Voltage -200 V VEBO Emitter-Base Volta

2SB645 Distributors

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2SB645 PNP Transistor INCHANGE

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