2SB609 PNP Transistor

INCHANGE

Description

isc Silicon PNP Power Transistor INCHANGE Semiconductor 2SB609 .
Collector-Emitter BreakdownVoltage- : V(BR)CEO= -80V(Min. Low Collector Saturation Voltage- : VCE(sat)= -1. Wide area.

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Datasheet Specifications

Part number: 2SB609
Manufacturer: INCHANGE
File Size: 176.67 KB
Datasheet: 2SB609-INCHANGE.pdf
Description: PNP Transistor

Applications

* Designed for audio frequency power amplifiers applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -4 A ICM Collecto

2SB609 Distributors

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2SB609 PNP Transistor INCHANGE

INCHANGE 2SB609-like datasheet