Datasheet4U Logo Datasheet4U.com

2SB609 - PNP Transistor

2SB609 Description

isc Silicon PNP Power Transistor INCHANGE Semiconductor 2SB609 .
Collector-Emitter BreakdownVoltage- : V(BR)CEO= -80V(Min. Low Collector Saturation Voltage- : VCE(sat)= -1. Wide area.

2SB609 Applications

* Designed for audio frequency power amplifiers applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -4 A ICM Collecto

📥 Download Datasheet

Preview of 2SB609 PDF
datasheet Preview Page 2

Datasheet Details

Part number
2SB609
Manufacturer
INCHANGE
File Size
176.67 KB
Datasheet
2SB609-INCHANGE.pdf
Description
PNP Transistor

📁 Related Datasheet

  • 2SB605 - PNP SILICON TRANSISTOR (NEC)
  • 2SB616 - SILICON POWER TRANSISTOR (SavantIC)
  • 2SB617 - Silicon Triple Diffused Transistor (ETC)
  • 2SB617A - Silicon Triple Diffused Transistor (ETC)
  • 2SB621 - Silicon PNP Transistor (Panasonic Semiconductor)
  • 2SB621A - Silicon PNP Transistor (Panasonic Semiconductor)
  • 2SB624 - PNP Transistor (NEC)
  • 2SB624-HF - PNP Transistors (Kexin)

📌 All Tags

PNP Transistor INCHANGE
INCHANGE 2SB609-like datasheet