2SB608 - PNP Transistor
*Collector-Emitter BreakdownVoltage- : V(BR)CEO= -180V(Min.) *Low Collector Saturation Voltage- : VCE(sat)= -1.0(Max.) @IC= -0.5A *Good Linearity of hFE *Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS *Designed for power amplifier
