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2SB608 - PNP Transistor

2SB608 Description

isc Silicon PNP Power Transistor INCHANGE Semiconductor 2SB608 .
Collector-Emitter BreakdownVoltage- : V(BR)CEO= -180V(Min. Low Collector Saturation Voltage- : VCE(sat)= -1. Good Li.

2SB608 Applications

* Designed for power amplifier applications . ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -180 V VCEO Collector-Emitter Voltage -180 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -2 A ICM Collector Current-Peak

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Datasheet Details

Part number
2SB608
Manufacturer
INCHANGE
File Size
180.53 KB
Datasheet
2SB608-INCHANGE.pdf
Description
PNP Transistor

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PNP Transistor INCHANGE
INCHANGE 2SB608-like datasheet