2SB613 PNP Transistor

INCHANGE

Description

isc Silicon PNP Power Transistors .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= -250V(Min). High Power Dissipation- : PC= 150W(Max)@TC=25℃. High Current Capability.

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Datasheet Specifications

Part number: 2SB613
Manufacturer: INCHANGE
File Size: 203.46 KB
Datasheet: 2SB613-INCHANGE.pdf
Description: PNP Transistor

Applications

* Designed for high power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -250 V VCEO Collector-Emitter Voltage -250 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -15 A IB Base

2SB613 Distributors

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2SB613 PNP Transistor INCHANGE

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