2SB613 Datasheet - INCHANGE

2SB613, PNP Transistor

isc Silicon PNP Power Transistors DESCRIPTION *Collector-Emitter Breakdown Voltage- : V(BR)CEO= -250V(Min) *High Power Dissipation- : PC= 150

Applications

* Designed for high power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -250 V VCEO Collector-Emitter Voltage -250 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -15 A IB Base

2SB613-INCHANGE.pdf