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2SB613 - PNP Transistor

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Part number 2SB613
Manufacturer INCHANGE
File Size 203.46 KB
Description PNP Transistor
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Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= -250V(Min) High Power Dissipation- : PC= 150W(Max)@TC=25℃ High Current Capability Complement to Type 2SD583 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -250 V VCEO Collector-Emitter Voltage -250 V VEBO E

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