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2SB613 - PNP Transistor

2SB613 Description

isc Silicon PNP Power Transistors .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= -250V(Min). High Power Dissipation- : PC= 150W(Max)@TC=25℃. High Current Capability.

2SB613 Applications

* Designed for high power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -250 V VCEO Collector-Emitter Voltage -250 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -15 A IB Base

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Datasheet Details

Part number
2SB613
Manufacturer
INCHANGE
File Size
203.46 KB
Datasheet
2SB613-INCHANGE.pdf
Description
PNP Transistor

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PNP Transistor INCHANGE
INCHANGE 2SB613-like datasheet