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2SB616 - PNP Transistor

2SB616 Description

isc Silicon PNP Power Transistor INCHANGE Semiconductor 2SB616 .
Collector-Emitter BreakdownVoltage- : V(BR)CEO= -100V(Min. Low Collector Saturation Voltage- : VCE(sat)= -1. With TO-3.

2SB616 Applications

* Designed for power amplifiers applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -5 A PC Collector Power Dissipat

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Datasheet Details

Part number
2SB616
Manufacturer
INCHANGE
File Size
185.77 KB
Datasheet
2SB616-INCHANGE.pdf
Description
PNP Transistor

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PNP Transistor INCHANGE
INCHANGE 2SB616-like datasheet