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2SB612 - PNP Transistor

2SB612 Description

isc Silicon PNP Power Transistors 2SB612 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= -140V(Min). High Power Dissipation- : PC= 100W(Max)@TC=25℃. Complement to Type 2SD582.

2SB612 Applications

* Recommended for 80~100W audio amplifier output stage. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -180 V VCEO Collector-Emitter Voltage -140 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -12 A ICM Collector C

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Datasheet Details

Part number
2SB612
Manufacturer
INCHANGE
File Size
207.33 KB
Datasheet
2SB612-INCHANGE.pdf
Description
PNP Transistor

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PNP Transistor INCHANGE
INCHANGE 2SB612-like datasheet