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2SB600 - PNP Transistor

2SB600 Description

isc Silicon PNP Power Transistors .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= -200V(Min). High Power Dissipation- : PC= 200W(Max)@TC=25℃. Complement to Type 2SD555.

2SB600 Applications

* Audio frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -200 V VCEO Collector-Emitter Voltage -200 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -10 A ICM Collector Current-P

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Datasheet Details

Part number
2SB600
Manufacturer
INCHANGE
File Size
211.00 KB
Datasheet
2SB600-INCHANGE.pdf
Description
PNP Transistor

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PNP Transistor INCHANGE
INCHANGE 2SB600-like datasheet