2SB600 - PNP Transistor
*Collector-Emitter Breakdown Voltage- : V(BR)CEO= -200V(Min) *High Power Dissipation- : PC= 200W(Max)@TC=25℃ *Complement to Type 2SD555 *Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS *Audio frequency power amplifier applications.
