2SB600 Datasheet - INCHANGE

2SB600, PNP Transistor

isc Silicon PNP Power Transistors .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= -200V(Min). High Power Dissipation- : PC= 200W(Max)@TC=25℃. Complement to Type 2SD555.

datasheet Preview Page 1 from Datasheet4u.com

2SB600-INCHANGE.pdf

2SB600 Datasheet Preview — Preview of 2SB600 PDF

Datasheet Details

Part number:

2SB600

Manufacturer:

INCHANGE

File Size:

211.00 KB

Description:

PNP Transistor

Applications

* Audio frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -200 V VCEO Collector-Emitter Voltage -200 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -10 A ICM Collector Current-P

2SB600 Distributors

📁 Related Datasheet

2SB605 2SB609 2SB616 2SB617 2SB617A 2SB621

📌 All Tags

2SB600 PNP Transistor INCHANGE

INCHANGE 2SB600-like datasheet