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2SB600

PNP Transistor

2SB600 General Description


*Collector-Emitter Breakdown Voltage- : V(BR)CEO= -200V(Min)
*High Power Dissipation- : PC= 200W(Max)@TC=25℃
*Complement to Type 2SD555
*Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS
*Audio frequency power amplifier applications..

2SB600 Datasheet (211.00 KB)

Preview of 2SB600 PDF

Datasheet Details

Part number:

2SB600

Manufacturer:

INCHANGE

File Size:

211.00 KB

Description:

Pnp transistor.

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2SB600 PNP Transistor INCHANGE

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