2SB944 Silicon PNP Power Transistor

Inchange Semiconductor

Description

isc Silicon PNP Power Transistor 2SB944 .
Low Collector Saturation Voltage : VCE(sat)= -0. Collector-Emitter Breakdown Voltage- : V(BR)CEO= -80V (Min). Good Linea.

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Datasheet Specifications

Part number: 2SB944
Manufacturer: Inchange Semiconductor
File Size: 218.21 KB
Datasheet: 2SB944_InchangeSemiconductor.pdf
Description: Silicon PNP Power Transistor

Applications

* Designed for power amplification. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -130 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous -4 A ICM Collector Current-Peak Collector

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📁 Related Datasheet

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Silicon PNP Power Transistor Inchange Semiconductor

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