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2SC3355 Datasheet - Inchange Semiconductor

Silicon NPN RF Transistor

2SC3355 General Description

*Low Noise NF = 1.5dB TYP @ VCE=10V，IC=7mA， f=1GHz *High Power Gain ︱S21e︱2 = 9.5dB TYP @ VCE=10V，IC=20mA，f=1GHz *Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS *The 2SC3355 is an NPN silicon epitaxial transistor designed for low n.

2SC3355 Datasheet (192.01 KB)

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Datasheet Details

Part number:

2SC3355

Manufacturer:

Inchange Semiconductor

File Size:

192.01 KB

Description:

Silicon npn rf transistor.

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2SC3355 Silicon NPN Transistor Inchange Semiconductor

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