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2SC4766 Silicon NPN Transistor

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Description

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC4766 .
High Breakdown Voltage- : VCBO= 1700V (Min). High Switching Speed. Low Saturation Voltage. Built-in Damper Diode. 100% avalanche.

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Datasheet Specifications

Part number
2SC4766
Manufacturer
Inchange Semiconductor
File Size
192.16 KB
Datasheet
2SC4766-InchangeSemiconductor.pdf
Description
Silicon NPN Transistor

Applications

* Horizontal deflection output for medium resolution display. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1700 V VCEO Collector-Emitter Voltage 600 V VEBO Emitter-Base Voltage 5 V IC Collector Current- Continuous ±6 A ICP Collect

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