* High speed (tf=100ns typ).
* High breakdown voltage (VCBO=1500V).
* High reliability (Adoption of HVP process).
* Adoption of MBIT process.
* On-chip damper diode. Package Dimensions unit:mm 2039D [2SC4769] 3.4 16.0 5.0 8.0 5.6 3.1 21.0 22.0 w w w . D a t a S h e e t 4 U .
2SC4769
Sanyo Semicon Device
129.81 KB
Npn transistor.
Ordering number:EN3665
NPN Triple Diffused Planar Silicon Transistor
2SC4769
Ultrahigh-Definition Color Display Horizontal Deflection Output Applica.
📁 Related Datasheet
2SC4761 - NPN Transistor
(INCHANGE)
isc Silicon NPN Power Transistor
DESCRIPTION ·High Breakdown Voltage-
: VCBO= 1700V (Min) ·High Switching Speed ·Low Saturation Voltage ·100% avalanc.
2SC4762 - NPN Transistor
(INCHANGE)
isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SC4762
DESCRIPTION ·High Breakdown Voltage-
: VCBO= 1500V (Min) ·High Switching Speed ·Low .
2SC4763 - NPN Transistor
(INCHANGE)
isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SC4763
DESCRIPTION ·High Breakdown Voltage-
: VCBO= 1500V (Min) ·High Switching Speed ·Low .
2SC4764 - SILICON POWER TRANSISTOR
(SavantIC)
..
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC4764
DESCRIPTION ·With TO-3P(H)IS package ·High.
2SC4764 - NPN Transistor
(INCHANGE)
isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SC4764
DESCRIPTION ·High Breakdown Voltage-
: VCBO= 1500V (Min) ·High Switching Speed ·Low .
2SC4765 - NPN Transistor
(INCHANGE)
isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SC4765
DESCRIPTION ·High Breakdown Voltage-
: VCBO= 1700V (Min) ·High Switching Speed ·Low .
2SC4766 - Silicon NPN Transistor
(Inchange Semiconductor)
isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SC4766
DESCRIPTION ·High Breakdown Voltage-
: VCBO= 1700V (Min) ·High Switching Speed ·Low .
2SC4767 - NPN TRANSISTOR
(Panasonic Semiconductor)
Productnnua 2.3±0.2
Transistor
2SC4767
Silicon NPN epitaxial planer type
For high-frequency power amplification
s Features
q High transition frequenc.
