2SC4757 Silicon NPN Power Transistor

Inchange Semiconductor

Description

isc Silicon NPN Power Transistor .
High Breakdown Voltage- : VCBO= 1500V (Min). High Switching Speed. Low Saturation Voltage. 100% avalanche tested. Minimum Lot-to-.

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Datasheet Specifications

Part number: 2SC4757
Manufacturer: Inchange Semiconductor
File Size: 192.44 KB
Datasheet: 2SC4757_InchangeSemiconductor.pdf
Description: Silicon NPN Power Transistor

Applications

* Horizontal deflection output for high resolution display.
* High speed switching power supply output applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 600 V VEBO Emitter-Base Voltage 5

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2SC4757 Silicon NPN Power Transistor Inchange Semiconductor

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