2SC5099 Silicon NPN Power Transistors

Inchange Semiconductor

Description

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC5099 .
Collector-Emitter Breakdown Voltage- V(BR)CEO= 80V(Min). Good Linearity of hFE. Complement to Type 2SA1907. 100% avalanche tested.

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Datasheet Specifications

Part number: 2SC5099
Manufacturer: Inchange Semiconductor
File Size: 195.64 KB
Datasheet: 2SC5099_InchangeSemiconductor.pdf
Description: Silicon NPN Power Transistors

Applications

* Designed for audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 6 A IB Base Current-Continu

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2SC5099 Silicon NPN Power Transistors Inchange Semiconductor

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