2SK2027-01 Datasheet, Transistor, Inchange Semiconductor

PDF File Details

Part number:

2SK2027-01

Manufacturer:

Inchange Semiconductor

File Size:

215.94kb

Download:

📄 Datasheet

Description:

N-channel mosfet transistor.

Drain Current   –ID= 8A@ TC=25℃

Drain Source Voltage- : VDSS= 600V(Min)

Fast Switching Speed

2SK2027-01 Application

• Applications
• Switching regulators
• UPS
• DC-DC converters
• General purpose power amplifier ABSOLUTE MAXIMUM RATINGS

TAGS

2SK2027-01

Inchange Semiconductor

📁 Related Datasheet

2SK2027-01 - N-channel MOS-FET (Fuji Electric)
2SK2027-01 FAP-IIA Series > Features High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarante.

2SK2020-01 - N-Channel MOSFET Transistor (Inchange Semiconductor)
isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current –ID= 3.5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·Fast Switching Speed ·Minimum .

2SK2020-01MR - N-channel MOS-FET (Fuji Electric)
2SK2020-01MR FAP-IIA Series > Features High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guaran.

2SK2020-01MR - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor 2SK2020-01MR DESCRIPTION ·Drain Current –ID= 3.5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·Fast Switching S.

2SK2021-01 - N-channel MOS-FET (Fuji Electric)
2SK2021-01 FAP-IIA Series > Features High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarante.

2SK2021-01 - N-Channel MOSFET Transistor (Inchange Semiconductor)
isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current –ID= 5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·Fast Switching Speed ·Minimum Lo.

2SK2022-01M - N-channel MOS-FET (Fuji Electric)
2SK2022-01M FAP-IIA Series > Features High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarant.

2SK2022-01M - N-Channel MOSFET Transistor (Inchange Semiconductor)
isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current –ID= 5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·Fast Switching Speed ·Minimum Lo.

2SK2023-01 - N-channel MOS-FET (Fuji Electric)
2SK2023-01 FAP-IIA Series > Features High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarante.

2SK2023-01 - N-Channel MOSFET Transistor (Inchange Semiconductor)
isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current –ID= 3A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Fast Switching Speed ·Minimum Lo.