2SK3109-AZ - N-Channel MOSFET Transistor

Inchange Semiconductor

2SK3109-AZ Datasheet Preview — Preview of 2SK3109-AZ PDF

Datasheet Details

Part number	2SK3109-AZ
Manufacturer	Inchange Semiconductor
File Size	356.58 KB
Description	N-Channel MOSFET Transistor
Datasheet	2SK3109-AZ-InchangeSemiconductor.pdf

2SK3109-AZ Product details

Description

motor drive, DC-DC converter, power switch and solenoid drive.ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 200 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 10 A IDM Drain Current-Single Pluse 30 A PD Total Dissipation @TC=25℃ 50 W TJ Max.Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Juncti

Features

Drain Current : ID= 10A@ TC=25℃.
Drain Source Voltage : VDSS= 200V(Min).
Static Drain-Source On-Resistance : RDS(on) = 0.4Ω(Max) @ VGS= 10V.
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Published: Jun 19, 2022 |