2SK351 Datasheet, Transistor, Inchange Semiconductor

2SK351 Features

• Transistor
• Drain Current : ID= 5A@ TC=25℃
• Drain Source Voltage : VDSS= 800V(Min)
• Static Drain-Source On-Resistance : RDS(on) = 3Ω(Max) @ VGS= 10V
• 100% avalanche

PDF File Details

Part number:

2SK351

Manufacturer:

Inchange Semiconductor

File Size:

299.21kb

Download:

📄 Datasheet

Description:

N-channel mosfet transistor.

motor drive, DC-DC converter, power switch and solenoid drive. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE

2SK351 Application

• Applications of our products. ISC products are intended for usage in general electronic equipment. The products are not designed for use in equipmen

TAGS

2SK351

Inchange Semiconductor

📁 Related Datasheet

2SK350 - N-Channel MOSFET Transistor (Inchange Semiconductor)
isc N-Channel MOSFET Transistor 2SK350 DESCRIPTION ·Drain Current –ID=10A@ TC=25℃ ·Drain Source Voltage- : VDSS= 450V(Min) ·Fast Switching Speed ·10.

2SK350 - Silicon N-Channel MOSFET (Hitachi)
.

2SK3501 - N-Channel MOSFET Transistor (Inchange Semiconductor)
isc N-Channel MOSFET Transistor 2SK3501 FEATURES ·Drain Current : ID= 10A@ TC=25℃ ·Drain Source Voltage : VDSS= 600V(Min) ·Static Drain-Source On-Re.

2SK3501-01 - N-CHANNEL SILICON POWER MOSFET (Fuji Electric)
2SK3501-01 Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof FUJI POWER MOSF.

2SK3502-01MR - N CHANNEL SILICON POWER MOSET (Fuji Electric)
2SK3502-01MR Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof FUJI POWER MO.

2SK3503 - N-Channel MOSFET (Kexin)
SMD Type MOSFET N-Channel MOSFET 2SK3503 SOT-523 1.6 +0.1 -0.1 1.0 +0.1 -0.1 0.2 +0.05 -0.05 U nit: m m 0.15±0.05 0.55 (REF.) 0.8±0.1 0.36±0.1 .

2SK3503 - N-Channel MOSFET (NEC)
DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3503 N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING DESCRIPTION The 2SK3503 is an N-chann.

2SK3504-01 - N-CHANNEL SILICON POWER MOSFET (Fuji Electric)
2SK3504-01 Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof FUJI POWER MOSF.

2SK3505 - N-Channel MOSFET (INCHANGE)
Isc N-Channel MOSFET Transistor 2SK3505 ·FEATURES ·With To-220F packaging ·Low input capacitance and gate charge ·Low gate input resistance ·100% av.

2SK3505-01MR - N-Channel MOSFET (Sanyo Semicon Device)
2SK3505-01MR Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof FUJI POWER MO.