3DA76 Datasheet - Inchange Semiconductor

3DA76, Silicon NPN Power Transistor

isc Silicon NPN Power Transistor DESCRIPTION *High DC Current Gain- : hFE= 15(Max) @IC= 0.3A *Excellent Safe Operating Area *Minimum Lot-

Applications

* Designed for use as an output device in complementary audio amplifiers ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCEO Collector-Emitter Voltage 65 V VEBO Emitter-Base Voltage 4.0 V IC Collector Current-Continuous 0.5 A PC Collector Power Dissipation@TC=75℃ 7

3DA76-InchangeSemiconductor.pdf