| Part number | 3DA76 |
|---|---|
| Datasheet | 3DA76-InchangeSemiconductor.pdf |
| File Size | 249.00 KB |
| Manufacturer | Inchange Semiconductor |
| Description | Silicon NPN Power Transistor |
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1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(BR) Collector-Emitter Breakdown Voltage IC= 50mA; IB=0 VCE(sat) Collector-Emitter Saturation Voltage IC= 0.5A; IB=0.1A ICBO Emitter Cutoff current VCE= 24V;.
See all Inchange Semiconductor datasheets
| Part Number | Description |
|---|---|
| 3DA752 | Silicon NPN Power Transistor |
| 3DA77 | Silicon NPN Power Transistor |
| 3DA882 | Silicon NPN Power Transistor |
