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BD735 Datasheet - Inchange Semiconductor

BD735 Silicon NPN Power Transistor

*DC Current Gain - : hFE = 40(Min.)@ IC= 20mA *Collector-Emitter Breakdown Voltage- : V(BR)CEO= 35V(Min.) *Complement to Type BD736 *Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS *Designed for amplifier and switching applications..

BD735_InchangeSemiconductor.pdf

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Datasheet Details

Part number:

BD735

Manufacturer:

Inchange Semiconductor

File Size:

207.70 KB

Description:

Silicon npn power transistor.

BD735 Distributor

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BD735 BD735 Silicon NPN Power Transistor Inchange Semiconductor