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BD738 Datasheet - Inchange Semiconductor

BD738 Silicon PNP Power Transistor

*DC Current Gain - : hFE = 40(Min.)@ IC= -20mA *Collector-Emitter Breakdown Voltage- : V(BR)CEO= -45V(Min.) *Complement to Type BD737 *Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS *Designed for amplifier and switching application.

BD738_InchangeSemiconductor.pdf

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Datasheet Details

Part number:

BD738

Manufacturer:

Inchange Semiconductor

File Size:

210.63 KB

Description:

Silicon pnp power transistor.

BD738 Distributor

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BD738 BD738 Silicon PNP Power Transistor Inchange Semiconductor