BD736 Silicon PNP Power Transistor

Inchange Semiconductor

Description

isc Silicon PNP Power Transistor BD736 .
DC Current Gain - : hFE = 40(Min. Collector-Emitter Breakdown Voltage- : V(BR)CEO= -35V(Min. Complement to Type BD735.

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Datasheet Specifications

Part number: BD736
Manufacturer: Inchange Semiconductor
File Size: 210.54 KB
Datasheet: BD736_InchangeSemiconductor.pdf
Description: Silicon PNP Power Transistor

Applications

* Designed for amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -35 V VCEO Collector-Emitter Voltage -35 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -4 A ICM Collector Current

BD736 Distributors

📁 Related Datasheet

BD733L2EFJ-C BD733L2EFJ-CE2 BD733L2FP-CE2 BD733L2FP3-CE2 BD733L5FP-C BD733L5FP-CE2

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BD736 Silicon PNP Power Transistor Inchange Semiconductor

Inchange Semiconductor BD736-like datasheet